MARC

 008000321s1998        ulka                        0a    kor
■0801  ▼a621.382
■082    ▼a621.381▼b김83ㅊ▼c1▼223
■090    ▼a621.381▼b김83ㅊ▼c1
■1000  ▼a김철주  감수
■24510▼a초청정  ULSI기술▼d김철주  감수
■260    ▼a서울▼b아카데미아리서치▼c1998
■300$  a428p.▼ba▼c24cm.
■44000▼a전자컴퓨터공학연구총서▼v1
■505    ▼a제1장  4단자  전자소자/컴퓨터  하드웨어에  지적인  기능부여▼c2▼a4단자  소자의  기초▼c5▼a4단자  소자로  실현한  "유연한"  정보처리  전자회로▼c14▼a앤티퓨즈  기술과  유연한  전자  시스템▼c24▼a지적  전자  시스템이  요구하는  초고정밀도  공정기술▼c29▼a제2장  고정밀도  저온화  전공정/저에너지  이온  조사  공정▼c35▼a프로우브를  사용한  플라즈마의  고정밀도  계측기술▼c56▼a고밀도  플라즈마를  사용한  셀프  챔버  클리닝  기술▼c63▼a초저온에서의Si  에피택셜  성장▼c73▼a금속배선▼c8500▼a초저온  게이트  산화막  형성기술▼c10011▼a저온  어닐을가능케  하는  초청정  이온  주입기술▼c10622▼a초미세  패턴  가공을  실현한  리소그래피  기술▼c11633▼a표면.계면의  초청정화  기술/초청정  표면▼c13144▼aF2.HF  공정▼c22355▼a고신뢰성  산화막의  초박막  형성기술▼c25666▼a화학반응기구의  전자물리▼c26877▼a정전기장해와  그  방지▼c28588▼a제4장  청정표면과  가스  분자의  상호작용/스테인레스  표면의  새로운  부동태화  처리▼c31199▼a부식표면의  전기화학반응▼c32900▼a청정표면과  가스  분자의  상호작용▼c34511▼a새로운  가스  공급  시스템▼c35322▼a제5장  반도체/반도체기술의  발전▼c35633▼a반도체  표면의  전자화학▼c35644
■950    ▼b39,800

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