서브메뉴
검색
Preparation of the Loew Cost SiC wafer by the Layer Splitting Method and the Wafer Direct Bonding Method
Preparation of the Loew Cost SiC wafer by the Layer Splitting Method and the Wafer Direct Bonding Method
상세정보
- 자료유형
- 기사
- ISSN
- 09120289
- 서명/저자
- Preparation of the Loew Cost SiC wafer by the Layer Splitting Method and the Wafer Direct Bonding Method / Takamitsu KAWAHARA, Naoki HATTA, Toyokazu SAKATA, Akiyuki MINAMI, Kuniaki YAGI, Hidetsugu UCHIDA, Motoki KOBAYASI and Hideki TAKAGI
- 형태사항
- pp. 833
- 모체레코드
- 모체정보확인
- Control Number
- gtec:378689
MARC
008171204s2017 aa jpn■022 ▼a09120289
■245 ▼aPreparation of the Loew Cost SiC wafer by the Layer Splitting Method and the Wafer Direct Bonding Method▼dTakamitsu KAWAHARA, Naoki HATTA, Toyokazu SAKATA, Akiyuki MINAMI, Kuniaki YAGI, Hidetsugu UCHIDA, Motoki KOBAYASI and Hideki TAKAGI
■300 ▼app. 833
■7001 ▼aTakamitsu KAWAHARA, Naoki HATTA, Toyokazu SAKATA, Akiyuki MINAMI, Kuniaki YAGI, Hidetsugu UCHIDA, Motoki KOBAYASI and Hideki TAKAGI
■773 ▼t精密工學會誌(日) : 정밀공학회지▼gv.83 n.9▼d2017, 09
■SIS ▼aKS035920▼b63119▼h3▼sG
