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Development of Ultra-high-voltage SiC Bipolar Junction Transistors
Development of Ultra-high-voltage SiC Bipolar Junction Transistors / Suda, J.
Development of Ultra-high-voltage SiC Bipolar Junction Transistors

Detailed Information

자료유형  
 기사
ISSN  
03857298
서명/저자  
Development of Ultra-high-voltage SiC Bipolar Junction Transistors / Suda, J.
형태사항  
pp. 112
기타저자  
Suda, J.
기본자료저록  
自動車技術=Journal of Society of Automotive Engineers of Japan : 자동차기술 : v.67 n.3 2013, 03
모체레코드  
모체정보확인
Control Number  
gtec:376244

MARC

 008171128s2013                                        aa    jpn
■022    ▼a03857298
■245    ▼aDevelopment  of  Ultra-high-voltage  SiC  Bipolar  Junction  Transistors▼dSuda,  J.
■300    ▼app.  112
■7001  ▼aSuda,  J.
■773    ▼t自動車技術=Journal  of  Society  of  Automotive  Engineers  of  Japan  :  자동차기술▼gv.67  n.3▼d2013,  03
■SIS    ▼aKS027109▼b63242▼h3▼sG

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