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Formation and Thermoelectric Properties of Si/CrSi2/Si(001) Heterostructures with Stressed Chromium Disilicide Nanocrystallites
Formation and Thermoelectric Properties of Si/CrSi2/Si(001) Heterostructures with Stressed Chromium Disilicide Nanocrystallites
Detailed Information
- 자료유형
- 기사
- ISSN
- 17388090
- 서명/저자
- Formation and Thermoelectric Properties of Si/CrSi2/Si(001) Heterostructures with Stressed Chromium Disilicide Nanocrystallites / Dmitry Goroshko ; Evgeniy Chusovitin
- 형태사항
- pp. 424
- 기타저자
- Dmitry Goroshko
- 기타저자
- Evgeniy Chusovitin
- 모체레코드
- 모체정보확인
- Control Number
- gtec:291819
MARC
008150522s2015 a a eng■022 ▼a17388090
■245 ▼aFormation and Thermoelectric Properties of Si/CrSi2/Si(001) Heterostructures with Stressed Chromium Disilicide Nanocrystallites▼dDmitry Goroshko▼eEvgeniy Chusovitin
■300 ▼app. 424
■7001 ▼aDmitry Goroshko
■7001 ▼aEvgeniy Chusovitin
■773 ▼tElectronic Materials Letters▼gv.11 n.3▼d2015, 05
■SIS ▼aKS030567▼b63247▼h3▼sG
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