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2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an A1N Buffer Layer and Effects of Surface Pre-Treatments
2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an A1N Buffer Layer and Effects of Surface Pre-Treatments
Detailed Information
- 자료유형
- 기사
- ISSN
- 17388090
- 서명/저자
- 2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an A1N Buffer Layer and Effects of Surface Pre-Treatments / Tien-Tung Luong ; Binh Tinh Tran
- 형태사항
- pp. 352
- 기타저자
- Tien-Tung Luong
- 기타저자
- Binh Tinh Tran
- 모체레코드
- 모체정보확인
- Control Number
- gtec:291809
MARC
008150522s2015 a a eng■022 ▼a17388090
■245 ▼a2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an A1N Buffer Layer and Effects of Surface Pre-Treatments▼dTien-Tung Luong▼eBinh Tinh Tran
■300 ▼app. 352
■7001 ▼aTien-Tung Luong
■7001 ▼aBinh Tinh Tran
■773 ▼tElectronic Materials Letters▼gv.11 n.3▼d2015, 05
■SIS ▼aKS030567▼b63247▼h3▼sG
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