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Bi-layer Channel Structure-Based Oxide Thin-Film Transistors Consisting of ZnO and AI-Doped nO with Different AI Compositions and Stacking
Bi-layer Channel Structure-Based Oxide Thin-Film Transistors Consisting of ZnO and AI-Doped nO with Different AI Compositions and Stacking
Detailed Information
- 자료유형
- 기사
- ISSN
- 17388090
- 서명/저자
- Bi-layer Channel Structure-Based Oxide Thin-Film Transistors Consisting of ZnO and AI-Doped nO with Different AI Compositions and Stacking / Sung Woon Cho ; Myeong Gu Yun
- 형태사항
- pp. 198
- 기타저자
- Sung Woon Cho
- 기타저자
- Myeong Gu Yun
- 모체레코드
- 모체정보확인
- Control Number
- gtec:290551
MARC
008150402s2015 a a eng■022 ▼a17388090
■245 ▼aBi-layer Channel Structure-Based Oxide Thin-Film Transistors Consisting of ZnO and AI-Doped nO with Different AI Compositions and Stacking▼dSung Woon Cho▼eMyeong Gu Yun
■300 ▼app. 198
■7001 ▼aSung Woon Cho
■7001 ▼aMyeong Gu Yun
■773 ▼tElectronic Materials Letters▼gv.11 n.2▼d2015, 03
■SIS ▼aKS030308▼b63247▼h3▼sG
