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AIGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode
AIGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode
Detailed Information
- Material Type
- 기사
- ISSN
- 17388090
- Title/Author
- AIGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode / Jung-yeon Lee ; Bong-Ryeol Park
- Material Info
- pp. 1115
- Added Entry-Personal Name
- Jung-yeon Lee
- Added Entry-Personal Name
- Bong-Ryeol Park
- Host Item Entry
- Electronic Materials Letters : v.10 n.6 2014, 11
- 모체레코드
- 모체정보확인
- Control Number
- gtec:287529
MARC
008141119s2014 a a eng■022 ▼a17388090
■245 ▼aAIGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode▼dJung-yeon Lee▼eBong-Ryeol Park
■300 ▼app. 1115
■7001 ▼aJung-yeon Lee
■7001 ▼aBong-Ryeol Park
■773 ▼tElectronic Materials Letters▼gv.10 n.6▼d2014, 11
■SIS ▼aKS029661▼b63247▼h3▼sG▼f1093
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