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AIGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode
AIGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode / Jung-yeon...
AIGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode

Detailed Information

자료유형  
 기사
ISSN  
17388090
서명/저자  
AIGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode / Jung-yeon Lee ; Bong-Ryeol Park
형태사항  
pp. 1115
기타저자  
Jung-yeon Lee
기타저자  
Bong-Ryeol Park
기본자료저록  
Electronic Materials Letters : v.10 n.6 2014, 11
모체레코드  
모체정보확인
Control Number  
gtec:287529

MARC

 008141119s2014              a    a                          eng
■022    ▼a17388090
■245    ▼aAIGaN/GaN  MOSHFET  Power  Switching  Transistor  with  Embedded  Fast  Recovery  Diode▼dJung-yeon  Lee▼eBong-Ryeol  Park
■300    ▼app.  1115
■7001  ▼aJung-yeon  Lee
■7001  ▼aBong-Ryeol  Park
■773    ▼tElectronic  Materials  Letters▼gv.10  n.6▼d2014,  11
■SIS    ▼aKS029661▼b63247▼h3▼sG▼f1093

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