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Graded Barrier AIGaN/AIN/GaN hererostructure for Improved 2- Dimensional Electron Gas Carrier Concentration and Mobility
Graded Barrier AIGaN/AIN/GaN hererostructure for Improved 2- Dimensional Electron Gas Carr...
Graded Barrier AIGaN/AIN/GaN hererostructure for Improved 2- Dimensional Electron Gas Carrier Concentration and Mobility

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자료유형  
 기사
ISSN  
17388090
서명/저자  
Graded Barrier AIGaN/AIN/GaN hererostructure for Improved 2- Dimensional Electron Gas Carrier Concentration and Mobility / Palash Das ; Nripendra N
형태사항  
pp. 1087
기타저자  
Palash Das
기타저자  
Nripendra N
기본자료저록  
Electronic Materials Letters : v.10 n.6 2014, 11
모체레코드  
모체정보확인
Control Number  
gtec:287525

MARC

 008141119s2014              a    a                          eng
■022    ▼a17388090
■245    ▼aGraded  Barrier  AIGaN/AIN/GaN  hererostructure  for  Improved  2-  Dimensional  Electron  Gas  Carrier  Concentration  and  Mobility▼dPalash  Das▼eNripendra  N
■300    ▼app.  1087
■7001  ▼aPalash  Das
■7001  ▼aNripendra  N
■773    ▼tElectronic  Materials  Letters▼gv.10  n.6▼d2014,  11
■SIS    ▼aKS029661▼b63247▼h3▼sG

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