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Graded Barrier AIGaN/AIN/GaN hererostructure for Improved 2- Dimensional Electron Gas Carrier Concentration and Mobility
Graded Barrier AIGaN/AIN/GaN hererostructure for Improved 2- Dimensional Electron Gas Carrier Concentration and Mobility
Detailed Information
- 자료유형
- 기사
- ISSN
- 17388090
- 서명/저자
- Graded Barrier AIGaN/AIN/GaN hererostructure for Improved 2- Dimensional Electron Gas Carrier Concentration and Mobility / Palash Das ; Nripendra N
- 형태사항
- pp. 1087
- 기타저자
- Palash Das
- 기타저자
- Nripendra N
- 모체레코드
- 모체정보확인
- Control Number
- gtec:287525
MARC
008141119s2014 a a eng■022 ▼a17388090
■245 ▼aGraded Barrier AIGaN/AIN/GaN hererostructure for Improved 2- Dimensional Electron Gas Carrier Concentration and Mobility▼dPalash Das▼eNripendra N
■300 ▼app. 1087
■7001 ▼aPalash Das
■7001 ▼aNripendra N
■773 ▼tElectronic Materials Letters▼gv.10 n.6▼d2014, 11
■SIS ▼aKS029661▼b63247▼h3▼sG
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