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Fabrication of a High-Performance Poly-Si Thin-Film Transistor Using a Poly-si FILM Prepared by Silicide-enhanced Rapid Thermal Annealing Process
Fabrication of a High-Performance Poly-Si Thin-Film Transistor Using a Poly-si FILM Prepared by Silicide-enhanced Rapid Thermal Annealing Process
Detailed Information
- 자료유형
- 기사
- ISSN
- 17388090
- 서명/저자
- Fabrication of a High-Performance Poly-Si Thin-Film Transistor Using a Poly-si FILM Prepared by Silicide-enhanced Rapid Thermal Annealing Process / Yong ho Yang ; Kyung Min Ahn
- 형태사항
- pp. 1081
- 기타저자
- Yong ho Yang
- 기타저자
- Kyung Min Ahn
- 모체레코드
- 모체정보확인
- Control Number
- gtec:287524
MARC
008141119s2014 a a eng■022 ▼a17388090
■245 ▼aFabrication of a High-Performance Poly-Si Thin-Film Transistor Using a Poly-si FILM Prepared by Silicide-enhanced Rapid Thermal Annealing Process▼dYong ho Yang▼eKyung Min Ahn
■300 ▼app. 1081
■7001 ▼aYong ho Yang
■7001 ▼aKyung Min Ahn
■773 ▼tElectronic Materials Letters▼gv.10 n.6▼d2014, 11
■SIS ▼aKS029661▼b63247▼h3▼sG
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