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Chemical Bond Structure and MOSFET Device Damages of Elcetron Beam Cured Siloxane Spin0on-dielectric Films
Chemical Bond Structure and MOSFET Device Damages of Elcetron Beam Cured Siloxane Spin0on-dielectric Films
Detailed Information
- 자료유형
- 기사
- ISSN
- 17388090
- 서명/저자
- Chemical Bond Structure and MOSFET Device Damages of Elcetron Beam Cured Siloxane Spin0on-dielectric Films / Sung Gyu Pyo
- 형태사항
- pp. 1057
- 기타저자
- Sung Gyu Pyo
- 모체레코드
- 모체정보확인
- Control Number
- gtec:287520
MARC
008141119s2014 a a eng■022 ▼a17388090
■245 ▼aChemical Bond Structure and MOSFET Device Damages of Elcetron Beam Cured Siloxane Spin0on-dielectric Films▼dSung Gyu Pyo
■300 ▼app. 1057
■7001 ▼aSung Gyu Pyo
■773 ▼tElectronic Materials Letters▼gv.10 n.6▼d2014, 11
■SIS ▼aKS029661▼b63247▼h3▼sG
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