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Optimisation of Readout Performance of Phas-Change Probe Memory in Terms of Capping Layer and Probe Tip
Optimisation of Readout Performance of Phas-Change Probe Memory in Terms of Capping Layer ...
Optimisation of Readout Performance of Phas-Change Probe Memory in Terms of Capping Layer and Probe Tip

Detailed Information

Material Type  
 기사
ISSN  
17388090
Title/Author  
Optimisation of Readout Performance of Phas-Change Probe Memory in Terms of Capping Layer and Probe Tip / Lei Wang ; C.David wright
Material Info  
pp. 1045
Added Entry-Personal Name  
Lei Wang
Added Entry-Personal Name  
C.David wright
Host Item Entry  
Electronic Materials Letters : v.10 n.6 2014, 11
모체레코드  
모체정보확인
Control Number  
gtec:287518

MARC

 008141119s2014              a    a                          eng
■022    ▼a17388090
■245    ▼aOptimisation  of  Readout  Performance  of  Phas-Change  Probe  Memory  in  Terms  of  Capping  Layer  and  Probe  Tip▼dLei  Wang▼eC.David  wright
■300    ▼app.  1045
■7001  ▼aLei  Wang
■7001  ▼aC.David  wright
■773    ▼tElectronic  Materials  Letters▼gv.10  n.6▼d2014,  11
■SIS    ▼aKS029661▼b63247▼h3▼sG

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