MARC

 008090603s2005        ulka                    000      kor
■020    ▼a8971632747
■0801  ▼a621.382
■082    ▼a621.38152▼b민95n▼223
■090    ▼a621.38152▼b민95n
■1001  ▼a민홍식,  박영준,  박병국,  신형철  공저
■24510▼aNANOCAD와  함께하는  반도체  소자▼d민홍식,  박영준,  박병국,  신형철  공저
■260    ▼a서울▼b대영사▼c2005
■300    ▼a576p.▼b삽도▼c25cm
■505    ▼a머리말▼c3▼a차례▼c7▼a제0장  서론▼c13▼a0-1  트랜지스터의  출현▼c14▼a0-2  직적  회로의  출현▼c15▼a0-3  집적  회로의  기술▼c16▼a0-4  VLSI  시대▼c19▼a참고문헌▼c28▼a제1장  반도체  기초  성질▼c31▼a1-1  반도체의  결정  구조▼c3300▼a1-2  반도체  내에서의  전자  에너지(에너지  밴드)▼c4311▼a1-3  전자와  홀▼c5822▼a1-4  불순물과  캐리어  농도▼c7033▼a연습문제▼c8044▼a참고문헌▼c8455▼a제2장  비평형  상태에서의  반도체  응답과  반도체  방적식▼c8766▼a2-1  외부  힘에  의한  캐리어  움직임(비평형  상태)▼c8877▼a2-2  이동도와  캐리어  에너지▼c8988▼a2-3  외부  캐리어의  주입에  의한  반도체의  응답(소수  캐리어  수명)▼c9999▼a2-4  확산▼c10400▼a2-5  재결합  메커니즘▼c10711▼a2-6  트랩의  정체▼c11522▼a2-7  반도체  방정식▼c11833▼a2-8  비평형  상태의  통계(유사  페르미  준위)▼c12644▼a연습문제▼c12855▼a참고문헌▼c13066▼a제3장  NANOCAD와  MyMOS▼c13377▼a3-1  반도체  방정식과  경계  조건▼c13488▼a3-2  MyMOS  소자▼c13999▼a3-3  NANOCAD의  입력과  출력▼c14100▼a연습  문제▼c16111▼a참고문헌▼c16222▼a제4장  P-N  접합▼c16533▼a4-1  P-N  접합의  의미▼c16744▼a4-2  평형  상태▼c17155▼a4-3  정전  용량과  전압과의  관계▼c17966▼a4-4  순방향  전압의  전류▼c18777▼a4-5  역방향  전압의  전류▼c20088▼a4-6  누설  전류의  다른  성분들▼c20899▼a4-7  역바이어스  항복  전압(breakdown  voltage)▼c21600▼a4-8  짧은  접합  효과(금속  접촉점이  중요해  짐)▼c22111▼a4-9  P-N  다이오드의  속도  특성▼c22322▼a4-10  N+P  다이오드의  설계  요점▼c23033▼aNANOCAD  실습▼c23444▼a연습  문제▼c23555▼a참고문헌▼c24166▼a제5장  바이폴라  트랜지스터▼c24577▼a5-1  파이폴라  소자  동작의  일반  원리▼c24788▼a5-2  전류  성분▼c25399▼a5-3  중요  소자  파라미터  a,b▼c26100▼a5-4  VLSI  소자에  중요한  세  가지  효과들  (Kirk  효과,  고농도  효과,  베이스  이미터저항효과)▼c26411▼a5-5  바이폴라  소자의  속도  특성▼c27722▼a5-6  바이폴라  소자의  항복  전압▼c28333▼a5-7  바이폴라  스케일링과  소자  설계▼c28744▼aNANOCAD  실습▼c29455▼a연습문제▼c29566▼a참고  문헌▼c29877▼a제6장  MOS  표면  이론▼c30188▼a6-1  평형  상태의  MOS  구조▼c30399▼a6-2  MOS  방정식▼c30800▼a6-3  MOS  C-V  이론▼c31711▼a6-4  MOS  C-V  이론(이상적이  아닌  경우)▼c32422▼a6-5  비평형  상태에서의  MOS  커패시터의  동작▼c33933▼aNANOCAD  실습▼c35044▼a연습  문제▼c35355▼a부록▼c35666▼a참고  문헌▼c36177▼a제7장  MOS소자  이론과  실제▼c36388▼a7-1  MOSFET  소자의  동작  원리▼c36599▼a7-2  긴  채널  MOSFET  소자의  특성▼c36900▼a7-3  MOS  트랜지스터의  커패시턴스와  속도  특성▼c38411▼a7-4  짧은  채널  MOS  트랜지스터의  특성▼c38922▼a7-5  PMOSFET▼c40633▼a7-6  고온  캐리어(hot  carrier)  효과와  신뢰성  문제▼c40844▼aNANOCAD  실습▼c42055▼a연습문제▼c42366▼a참고문헌▼c42677▼a제8장  MOS  스케일링과  새로운  MOS구조▼c43188▼a8-1  MOS  소자  스케일링  이론▼c43299▼a8-2  SOI  소자▼c44300▼a8-3  이중  게이트를  갖는  소자▼c47411▼a8-4  다중  게이트  및  양자선  소자▼c48122▼aNANOCAD  실습▼c48433▼a연습문제▼c49044▼a참고  문헌▼c49455▼a제9장  반도체  소자  잡음▼c50166▼a9-1  잡음  연구방법론▼c50277▼a9-2  잡음의  수학적  표현▼c50688▼a9-3  잡음원의  수학적  표현▼c51599▼a9-4  NANOCAD를  이용한  반도체  잡음  해석▼c52300▼a9-5  반도체  소자의  잡음▼c52911▼aNANOCAD  실습▼c54622▼a연습문제▼c54733▼a참고  문헌▼c54844▼a부록▼c55155▼a용어대조표▼c55366▼a찾아보기▼c56377
■9500  ▼c28,000

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