MARC

 008060526s2005        ulka                    000a    kor
■020    ▼a89-87951-42-1
■0801  ▼a621.38
■082    ▼a621.3815▼b연16ㅁ▼223
■090    ▼a621.3815▼b연16ㅁ
■1001  ▼a연규호
■24510▼a물리전자공학/▼d연규호  지음
■260    ▼a서울▼b우용출판사,▼c2005
■300    ▼a446p.:p.▼b삽도▼c26cm
■505    ▼a머리말▼c5▼a제1장  물리전자의기초▼c15▼a1-1원자와전자▼c15▼a1-2에너지의단위▼c18▼a1-3전위와전계▼c18▼a1-4전계내에서의전자의운동▼c20▼a1-5평등전계내에서전자의1차원운동▼c21▼a1-6평등전계내에서전자의2차원운동▼c23▼a1-7전자의정전편향▼c25▼a1-8자계내에서의전자의운동▼c2700▼a1-9전자의자기편향▼c2911▼a연습문제▼c3222▼a제2장  고체내의양자역학기초▼c3733▼a2-1물리학적모형▼c3744▼a2-2실험적관측▼c3955▼a2-3Bohr의모형▼c4466▼a2-4쉬뢰딩거파동방정식▼c4877▼a2-5전위우물속의전자▼c5188▼a연습문제▼c5499▼a제3장  결정체와반도체결정성장▼c5700▼a3-1결정▼c5711▼a3-2결정격자▼c5822▼a3-3원자의결합▼c6833▼a3-4반도체재료▼c7444▼a3-5반도체결정의성장▼c7655▼a연습문제▼c8666▼a제4장반도체물성의기초▼c8977▼a4-1Bohr의원자모형▼c8988▼a4-2원자의전자적구조▼c9699▼a4-3Pauli의배타율▼c10300▼a4-4에너지구조▼c10611▼a4-5자우전자와정공▼c11422▼a4-6에너지대의해석▼c11933▼a연습문제▼c12244▼a제5장  전장전도기구▼c12755▼a5-1전자와정공의열운동▼c12766▼a5-2드리프트운동▼c13077▼a5-3확산운동▼c13388▼a5-4이동도와확산정수와의관계▼c13799▼a5-5전류밀도▼c13800▼a5-6도전율▼c13911▼a연습문제▼c14122▼a제6장  반도체의전기적  성질▼c14533▼a6-1분포함수▼c14544▼a6-2진성반도체▼c15155▼a6-3외인성반도체▼c15766▼a6-4외인성반도체에서의캐리어농도▼c16377▼a6-5소수캐리어의수명▼c17088▼a6-6Hall효과▼c17499▼a연습문제▼c17900▼a제7장  PN접합▼c18311▼a7-1반도체재료의제조공정▼c18322▼a7-2PN접합▼c18633▼a7-3열평형상태에서의PN접합▼c19244▼a7-4열적평형상태에서의PN접합에관한해석▼c19755▼a7-5PN접합에대한바이어스전압의효과▼c20666▼a연습문제▼c21177▼a제8장  PN집합다이오드의특성▼c21588▼a8-1이상적PN다이오드의동작▼c21599▼a8-2이상적PN다이오드에관한해석▼c21900▼a8-3이상적PN다이오드의정특성▼c22511▼a8-4실제의PN다이오드의정특성▼c22822▼a8-5다이오드특성의온도변화▼c23133▼a8-6다이오드저항▼c23544▼a8-7공간전하용량▼c24055▼a8-8확산용량▼c24466▼a8-9애벌란치항복▼c24777▼a8-10재너항복▼c25388▼a8-11재너다이오드▼c25699▼a8-12터널다이오드▼c25900▼a연습문제▼c26611▼a제9장  금속과반도체와의접촉▼c26922▼a9-1금속솨금속의접촉▼c26933▼a9-2금속과반도체와의접촉▼c27244▼a9-3반도체의표면장벽▼c27555▼a9-4금속정류기▼c27766▼a9-5특수다이오드▼c279.77▼a9-6기타다이오드▼c29788▼a연습문제▼c30699▼a제10장  트랜지스터의특성▼c30900▼a10-1트랜지스터의구조▼c30911▼a102트랜지스터의작용▼c31122▼a10-3이상적트랜지스터의해석▼c31733▼a10-4Ebers-Moll의회로모델▼c32844▼a10-5실제의트랜지스터▼c33155▼a10-6공동베이스특징▼c33766▼a10-7공동에미터접속CE의정특성▼c34177▼a10-8CE정특성에관한해석▼c35188▼a10-8CE정특성에관한해석▼c35199▼a10-9크랜지스터의최대겅격▼c35900▼a연습문제▼c36411▼a제11장  전계효과트랜지스터▼c36722▼a11-1전계효과트랜지스터의일반적해석▼c36733▼a11-2접합전계효과트랜지스터의？조와특성▼c36944▼a11-3금손-절연체-반도체전계효과트랜지스터▼c38655▼a11-4MOS전계효과트랜지스터의구조및특성▼c40366▼a11-5CMOS▼c41977▼a11-6금속-반도체전계효과트랜지스터▼c42188▼a연습문제▼c42899▼a부록▼c4290000▼a인덱스▼c4390101
■653    ▼a53
■950    ▼b￦20000

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