MARC

 008060526s2005        ulka                    000      kor
■020    ▼a89-5717-049-9
■0801  ▼a621.38:53
■082    ▼a621.3815▼b박65ㅁ▼223
■090    ▼a621.3815▼b박65ㅁ
■1001  ▼a박용수,  서화일
■24510▼a물리전자공학기초/▼d박용수,  서화일  공저
■260    ▼a서울▼b내하출판사,▼c2005
■300    ▼a576p.:p.▼b삽도▼c23cm
■505    ▼aCHAPTER  1  반도체  기초▼c9▼a1.1  반도체  재료▼c11▼a1.2  결정▼c15▼a1.3  결정성장▼c26▼a1.4  웨이퍼  제작▼c30▼aCHAPTER  2  원자와  전자▼c35▼a2.1  현대물리의  세계▼c37▼a2.2  원자  구조▼c37▼a2.3  입자성▼c40▼a2.4  보어  모델▼c5000▼a2.5  양자역학▼c5711▼a2.6  주기율표▼c7322▼aCHAPTER  3  에너지대와  반도체의  캐리어농도▼c7933▼a3.1  에너지대  구조▼c8144▼a3.2  진성반도체와  외인성반도체▼c10055▼a3.3  캐리어농도▼c10766▼a3.4  축퇴반도체▼c13877▼aCHAPTER  4  캐리어의  전송현상▼c14188▼a4.1  전기전도▼c14399▼a4.2  캐리어  확산▼c15700▼a4.3  캐리어생성과  재결합▼c16511▼a4.4  연속방정식▼c18322▼aCHAPTER  5  접합▼c19733▼a5.1  접합▼c19944▼a5.2  pn  접합▼c20355▼a5.3  다이오드▼c25366▼a5.4  과도상태와  교류조건▼c26077▼a5.5  pn  접합의  정전용량▼c27088▼a5.6  pn  접합의  2차  효과▼c27899▼a5.7  금속-반도체(MS)  접합▼c29400▼a5.8  헤테로  접합▼c30811▼aCHAPTER  6  바이폴라  트랜지스터▼c31522▼a6.1  바이폴라  트랜지스터  기본특성▼c31733▼a6.2  직류특성▼c32644▼a6,3  EM  모델▼c33455▼a6.4  교류특성▼c35066▼a6.5  등가회로▼c35777▼a6.6  사이리스터▼c35988▼aCHAPTER  7  전계효과  트랜지스터▼c36799▼a7.1  유니폴라  트랜지스터의  기본  개념▼c36900▼a7.2  JFET▼c37211▼a7.3  MOS  커패시터▼c38322▼a7.4  MOSFET▼c40833▼a7.5  소규모  MOSFET의  특성▼c42344▼a7.6  기타  MOSFET▼c42855▼a7.7  CCD▼c43466▼a7.8  컬러  TFT-LCD▼c43877▼aCHAPTER  8  집적회로▼c44588▼a8.1  집적회로▼c44799▼a8.2  바이폴라  집적회로▼c45100▼a8.3  MOS  집적회로▼c45711▼a8.4  메모리  집적회로▼c48222▼aCHAPTER  9  광전소자와  반도체  센서소자▼c48933▼a9.1  광흡수와  발광현상▼c49144▼a9.2  수광소자▼c50155▼a9.3  발광소자▼c50766▼a9.4  태양전지▼c51577▼a9.5  온도센서▼c52188▼a9.6  열전효과소자▼c52499▼a9.7  자기효과소자▼c53200▼a9.8  압전효과소자▼c53711▼a부록▼c54522▼a용어사전▼c54733▼a찾아보기▼c56544
■9500  ▼b￦24000

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